Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("InGaAs")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 2097

  • Page / 84
Export

Selection :

  • and

1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applicationsPAVELESCU, E.-M; GILFERT, C; WEINMANN, P et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 14, issn 0022-3727, 145104.1-145104.4Article

A prototype for high resolution infrared reflectography of paintingsCONSOLANDI, L; BERTANI, D.Infrared physics & technology. 2007, Vol 49, Num 3, pp 239-242, issn 1350-4495, 4 p.Conference Paper

Photodiode P.I.N. InGaAs en grands signaux hyperfréquence : modélisation, réalisation et caractérisationDentan, Martin; Castagne.1989, 217 p.Thesis

Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold currentGORDEEV, N. Yu; NOVIKOV, I. I; SHCHUKIN, V. A et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045003.1-045003.4Article

The effect of dispersion of the refractive index on the performance of mid-infrared quantum cascade lasersLI, A. Z; CHEN, J. X; YANG, Q. K et al.Journal of crystal growth. 2001, Vol 227-28, pp 313-318, issn 0022-0248Conference Paper

Photoluminescence and Raman characterization from Er-implanted InxGa1-XAs bulk crystalARAI, Tomoyuki; UEKUSA, Shin-Ichiro.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689015.1-689015.8, issn 0277-786X, isbn 978-0-8194-7065-2, 1VolConference Paper

Quantum dot lasers using high-Q microdisk cavitiesMICHLER, P; KIRAZ, A; BECHER, C et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 3, pp 797-801, issn 0370-1972Conference Paper

Photoluminescence peculiarities in InGaAs/GaAs structures with different InAs quantum dot densitiesTORCHYNSKA, T. V.Journal of luminescence. 2013, Vol 136, pp 75-79, issn 0022-2313, 5 p.Article

SWIR Air Glow Mapping of the Night SkyMYERS, Michael M; DAYTON, David C; GONGLEWSKI, John D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7816, issn 0277-786X, isbn 978-0-8194-8312-6, 1Vol, 78160J.1-78160J.7Conference Paper

Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211―1285 nmJELMAKAS, E; TOMASIUNAS, R; VENGRIS, M et al.Optical materials (Amsterdam). 2013, Vol 35, Num 12, pp 2171-2174, issn 0925-3467, 4 p.Article

The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage MeasurementsHUAPU PAN; BELING, Andreas; HAO CHEN et al.IEEE journal of quantum electronics. 2009, Vol 45, Num 3-4, pp 265-269, issn 0018-9197, 5 p.Article

Quantum wells to quantum dots : 640x512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane arrayGUNAPALA, S. D; BANDARA, S. V; CHANGE, Y.-C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 629501.1-629501.8, issn 0277-786X, isbn 0-8194-6374-4Conference Paper

1.32-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature with low-threshold current densitySALHI, Abdelmajid; TASCO, Vittorianna; MARTIRADONNA, Luigi et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 618419.1-618419.8, issn 0277-786X, isbn 0-8194-6240-3, 1VolConference Paper

Two-color infrared focal plane array based on InAs/InGaAs/GaAs quantum dots in a well detectors designANNAMALAI, Senthil; DOWD, Philip; KRISHNA, Sanjay et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 58970P.1-58970P.4, issn 0277-786X, isbn 0-8194-5902-X, 1VolConference Paper

Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substratesMOMOSE, H; OKAI, H; DEGUCHI, H et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 309-312, issn 1386-9477, 4 p.Conference Paper

Influence of structure and defects on the performance of dot-in-well laser structuresGUTIERREZ, M; HOPKINSON, M; LIU, H. Y et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, issn 0277-786X, isbn 0-8194-5835-X, 2Vol, vol 2, 486-497Conference Paper

Long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) focal plane arrayGUNAPALA, S. D; BANDARA, S. V; CHANG, Y. C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6262-4, 2Vol, Vol. 1, 62060J.1-62060J.10Conference Paper

InGaAs/InGaAsP microdisk lasers grown by GSMBEGENZHU WU; WANG, X. H; ZHENG, Q et al.Journal of crystal growth. 2001, Vol 227-28, pp 343-345, issn 0022-0248Conference Paper

Electroluminescence Studies of Modulation p-Doped Quantum Dot Laser StructuresHASBULLAH, N. F; HOPKINSON, M; ALEXANDER, R. R et al.IEEE journal of quantum electronics. 2010, Vol 46, Num 11-12, pp 1847-1853, issn 0018-9197, 7 p.Article

Impact of strain engineering on InGaAs NMOSFET with an InGaAs alloy stressorCHANG, Shu-Tong; SUN, P.-H; LEE, Chang-Chun et al.Thin solid films. 2010, Vol 519, Num 5, pp 1738-1742, issn 0040-6090, 5 p.Conference Paper

Distinction investigation of InGaAs photodetectors cutoff at 2.9 μmCHENG LI; YONGGANG ZHANG; KAI WANG et al.Infrared physics & technology. 2010, Vol 53, Num 3, pp 173-176, issn 1350-4495, 4 p.Article

Flexible Solar Cells for Micro-Autonomous Systems TechnologyLESTER, Luke F; KAI YANG; EL-EMAWY, Mohamed A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7679, issn 0277-786X, isbn 978-0-8194-8143-6, 76790Y.1-76790Y.8Conference Paper

Investigation of Multi-Stack Quantum Dots-in-Double-Well Infrared DetectorsKUTTY, M. N; SHARMA, Y. D; BARVE, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7467, issn 0277-786X, isbn 978-0-8194-7757-6 0-8194-7757-5, 1Vol, 74670V.1-74670V.11Conference Paper

Electron transport study of a lateral InGaAs quantum dotLARSSON, M; WALLIN, D; XU, H. Q et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 1950-1951, issn 1386-9477, 2 p.Conference Paper

Indices of refraction of InGaAs/Alas/AlAsSb multiple-quantum-wells measured by an optical waveguide techniqueMOZUME, T.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 2031-2033, issn 1386-9477, 3 p.Conference Paper

  • Page / 84